Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model(Nuclear Science, Plasmas, and Electric Discharges)
スポンサーリンク
概要
- 論文の詳細を見る
We developed an oxide-film reactive ion etching (RIE) topography simulation which consists of a plasma simulation, a sheath model, and a surface reaction model. In the plasma simulation, the plasma parameters were calculated in two dimensions using the particle-in-cell/Monte Carlo collision (PIC/MCC) method. In the surface reaction model, the motion of particles in the etching trench was simulated by the Monte Carlo method. This topography simulation was applied to the etching by a capacitively coupled plasma (CCP). Etching conditions were as follows : gas pressure 5.3-10.6 Pa and RF power 1.1-1.7 kW in the gas mixture of C_4F_8, CO, O_2, and Ar. The calibration method for such simulation parameters as the ion reflection ratio, the etch rate and the polymer etch rate was established based on the experimental results. As a result, the change of the etching profile was reproduced according to the change of the gas pressure and RF power with high accuracy. Furthermore, it was shown that the simulator can predict the profile change corresponding to the process change.
- 社団法人応用物理学会の論文
- 2002-06-15
著者
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SHINMURA Tadashi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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IYANAGI Katsumi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Fujino Makoto
Advanced Memory Product Development Department Toshiba Corporation Semiconductor Company
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Fujino Makoto
Advanced Process Technology Group Ii Advanced Memory Product Development Memory Division Semiconduct
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Iyanagi Katsumi
Corporate Manufacturing Engineering Center Toshiba Corporation
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TAKAGI Shigeyuki
Corporate Manufacturing Engineering Center Toshiba Corporation
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Shinmura Tadashi
Corporate Manufacturing Engineering Center Toshiba Corporation
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ONOUE Seiji
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Onoue Seiji
Corporate Manufacturing Engineering Center Toshiba Corporation
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