Gap-Fill Process of Shallow Trench Isolation for 0.13 μm Technologies
スポンサーリンク
概要
- 論文の詳細を見る
Gap-fill technology using high-density plasma chemical vapor deposition (HDP-CVD) is one of the leading technologies in 0.13 μm generation semiconductor device processing. The analysis of the dependence of HDP-CVD filling characteristics on the processes used revealed that film deposition under an increased plasma power and low-pressure conditions is effective for stable gap filling. By optimizing these process parameters, we were able to implement shallow trench isolation (STI) of space width 0.13 μm and aspect ratio 3.9. Furthermore, we demonstrated that the angular dependence of sputter yield and the ionic deposition mechanism are important factors when performing filling by means of HDP-CVD. The filling characteristics can be improved by increasing the maximum sputter yield angle and the amount of ionic deposition component. Based on these mechanisms, we constructed a topography simulation model which enables accurate expression of the topography of the HDP-CVD film.
- 社団法人応用物理学会の論文
- 2002-05-15
著者
-
Nishi Norio
Graduate School Of Environmental Earth Science Hokkaido University
-
Fujino Makoto
Advanced Memory Product Development Department Toshiba Corporation Semiconductor Company
-
NISHIMURA Hiroshi
Corporate Manufacturing Engineering Center Toshiba Corporation
-
TAKAGI Shigeyuki
Corporate Manufacturing Engineering Center Toshiba Corporation
関連論文
- A Bivalent Poly (ethylene glycol) Hybrid Containing an Active Site (RGD) and a Synergistic Site of Fibronectin
- Conjugation of Laminin Derived Cell Adhesive Peptides on a Chitosan Membrane and Their Biological Activity
- Effect of Nucloeplasmin on Stability of Nucleosome Structure
- Large-Scale Production of Ba^-Alginate-Coated Vesicles of Carbon Nanofibers for DNA-Interactive Pollutant Elimination
- Screening of Amyloidogenic Peptides in Laminin-1
- Neurite Outgrowth Promoting Sites on the Laminin Alpha 3 Chain
- Cell Adhesive and Heparin Binding Sites on the Laminin Alpha Chain G Domains
- Identification of Biologically Active Sequences on the Laminin Alpha Chain G Domains
- Identification of Cell Adhesive Sites on the Laminin Alpha Chain Domain VI
- Effect of KAFDITYVRLK(C-16), a Laminin Gamma 1 Chain Peptide, to Tumor Cell Adhesion and Metastasis
- Identification of Biologically Active Peptides in Laminin-1
- Biological Activity of a Cyclic Peptide from Laminin α1 Chain Loop Region
- Biological Activities of the Loop Structure Regions in the Laminin Alpha Chain G Domains
- Peptide Mapping of Biologically Active Sequences in the Laminin Alpha 4 Chain G Domain
- Conformational Study of the Tandem Repeat Sequence in RNA Polymerase II by Circular Dichroism Spectroscopy
- Effect of DNA on Collagen Fibrillogenesis
- Multiscale Analysis of Silicon Low-Pressure Chemical Vapor Deposition
- Effect of the Substituent Groups of SCM-Chitin-RGDS Conjugate on Inhibitory Activity of Tumor Metastasis
- Gap-Fill Process of Shallow Trench Isolation for 0.13 μm Technologies
- Calibration Method for High-Density-Plasma Chemical Vapor Deposition Simulation
- Functional Peptide Fibrils as Bio-medical Materials
- Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model(Nuclear Science, Plasmas, and Electric Discharges)
- Identification of Cell Binding Sites in the Laminin Alpha 5 chain G-Domain by Systematic Screening of Synthetic Peptides
- Biologically Active Sequences in Laminin, a Multifunctional Extracellular Matrix Protein
- Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber
- Study on Surface Modification of Indium Tin Oxide and Resist Surfaces Using CF4/O2 Plasma for Manufacturing Organic Light-Emitting Diodes by Inkjet Printing
- Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF6 and H2
- Modeling and Simulation of Arsenic-Doped-Silicon Low-Pressure Chemical Vapor Deposition
- Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber