Calibration Method for High-Density-Plasma Chemical Vapor Deposition Simulation

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概要

• 論文の詳細を見る

• We present a consistent calibration method for high-density-plasma chemical vapor deposition (HDP-CVD) topography simulation using the gap-filling process of the inter-metal dielectric (IMD). For the HDP-CVD model, four phenomena, thermal deposition, ion-enhanced deposition, sputter-etching by Ar^+ ion, and redeposition, were considered. The contribution of each phenomenon to surface evolution was determined on the basis of six parameters. All six parameters were calibrated by methods including deposition/etching rate measurement, an experiment using the test structure and plasma simulation. The simulation calibrated by these methods has high predictive accuracy in terms of the gap-fill capability in trenches. [DOI: 10.1143/JJAP.41.1974]

• 社団法人応用物理学会の論文
• 2002-04-15

著者

• Shigyo Naoyuki

  System Lsi Design Division Semiconductor Company Toshiba Corporation

• Kinoshita Shigeru

  Corporate Manufacturing Engineering Center Toshiba Corporation

• NISHIMURA Hiroshi

  Corporate Manufacturing Engineering Center Toshiba Corporation

• TAKAGI Shigeyuki

  Corporate Manufacturing Engineering Center Toshiba Corporation

• YABUHARA Hidehiko

  Corporate Manufacturing Engineering Center, Toshiba Corporation

• KAWAGUCHI Hideichi

  System LSI Design Division, Semiconductor Company, Toshiba Corporation

• Yabuhara Hidehiko

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Kawaguchi Hideichi

  System Lsi Design Division Semiconductor Company Toshiba Corporation

• Nishimura H

  Corporate Manufacturing Engineering Center Toshiba Corporation

関連論文

• Multiscale Analysis of Silicon Low-Pressure Chemical Vapor Deposition
• Gap-Fill Process of Shallow Trench Isolation for 0.13 μm Technologies
• Calibration Method for High-Density-Plasma Chemical Vapor Deposition Simulation
• Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model(Nuclear Science, Plasmas, and Electric Discharges)
• Depth Profile Prediction on Low Energy Boron Implantation Process by Tight-Binding Quantum Chemical Molecular Dynamics
• Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber
• Evaluation of n^+a-Si Contact with Indium Tin Oxide by X-Ray Photoelectron Spectroscopy Valence Band Measurement
• Study on Surface Modification of Indium Tin Oxide and Resist Surfaces Using CF4/O2 Plasma for Manufacturing Organic Light-Emitting Diodes by Inkjet Printing
• Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF6 and H2
• Tight-Binding Quantum Chemical Molecular Dynamics Study on Depth Profile Prediction in Low Energy Boron Implantation Process
• Modeling and Simulation of Arsenic-Doped-Silicon Low-Pressure Chemical Vapor Deposition
• Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber

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