Modeling and Simulation of Arsenic-Doped-Silicon Low-Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
In this paper, we present the modeling and simulation of As-doped-Si low-pressure chemical vapor deposition (LPCVD), in which a Si film growth step using SiH4 and an AsH3 adsorption step are alternately performed (sequential doping is carried out). We focus on the Si film growth in the second step of sequential doping, which involves Si film growth (first step) $\rightarrow$ AsH3 adsorption $\rightarrow$ Si film growth (second step). The growth thickness and As concentration in the Si film are evaluated with respect to deposition time. As atoms adsorbed on the Si surface after the AsH3 adsorption step are taken up by the Si layer grown in the second step, and some of these atoms precipitate on the Si film surface. The adsorption of SiH4 is suppressed owing to the effect of the As atoms precipitated on the Si film surface, resulting in a decrease in the growth rate of the Si film. On the basis of this finding, we construct a surface reaction model by determining the sticking coefficient of SiH4 from the growth plots in the second step. The Si film growth profiles on submicron holes are analyzed by topography simulation using the surface reaction model, and simulation results are compared with experimentally obtained results.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-08-15
著者
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Kinoshita Shigeru
Corporate Manufacturing Engineering Center Toshiba Corporation
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Maki Kunisuke
Graduate School Of Integrated Science Yokohama City University
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TAKAGI Shigeyuki
Corporate Manufacturing Engineering Center Toshiba Corporation
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Suzuki Takashi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Kinoshita Shigeru
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan
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Konno Takuya
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan
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Takagi Shigeyuki
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan
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Suzuki Takashi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita, Isogo-ku, Yokohama 235-8522, Japan
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