Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber
スポンサーリンク
概要
- 論文の詳細を見る
In a plasma chemical vapor deposition (CVD) chamber, particles generated during the deposition process adhere to the wafer after the process ends. Since it is important to remove particles efficiently in the discharge step after the deposition process, we determined the optimal conditions by using particle motion simulation. The electrostatic force, ion drag force, and gas drag force produced by neutrals, which particles receive in plasma, are calculated from plasma and gas flow simulations. The particles vibrate in response to the downward ion drag force and the upward electrostatic force, while moving to the wafer edge due to the gas flow. In the discharge step, the baseline condition and another condition (the side power condition) where the electric field is perpendicular to the wafer were compared using 50 particles set at random positions. The number of remaining particles was 15.0 under the baseline condition and 2.8 under the side power condition. In the experimental results corresponding to both conditions, the number was found to be reduced to 23.3% by adjusting the conditions. The simulation results are in good agreement with the experimental results.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
-
TAKAGI Shigeyuki
Corporate Manufacturing Engineering Center Toshiba Corporation
-
Hasegawa Isahiro
Process Engineering Group I Semiconductor Company
-
Onoue Seiji
Corporate Manufacturing Engineering Center Toshiba Corporation
-
Terazawa Tatsuya
Process Engineering Group I Semiconductor Company
-
Takagi Shigeyuki
Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan
-
Nishitani Kazuhito
Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan
関連論文
- Multiscale Analysis of Silicon Low-Pressure Chemical Vapor Deposition
- Gap-Fill Process of Shallow Trench Isolation for 0.13 μm Technologies
- Calibration Method for High-Density-Plasma Chemical Vapor Deposition Simulation
- Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model(Nuclear Science, Plasmas, and Electric Discharges)
- Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber
- Study on Surface Modification of Indium Tin Oxide and Resist Surfaces Using CF4/O2 Plasma for Manufacturing Organic Light-Emitting Diodes by Inkjet Printing
- Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF6 and H2
- Modeling and Simulation of Arsenic-Doped-Silicon Low-Pressure Chemical Vapor Deposition
- Measurements and Simulations of Particles in a Plasma Chemical Vapor Deposition Chamber