Evaluation of n^+a-Si Contact with Indium Tin Oxide by X-Ray Photoelectron Spectroscopy Valence Band Measurement

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概要

• 論文の詳細を見る

• We investigated the cause of the high resistance in a contact structure of phosphorus-doped amorphous silicon (n^+a-Si) with indium tin oxide (ITO) for thin-film transistor liquid crystal displays (TFT-LCDs). X-ray photoelectron spectroscopy (XPS) valence band analysis for this interface was newly developed. TFT-LCD fabrication processes could be simplified by using ITO in pixels as the drain contact electrode. One problem of this drain structure was the increase in electrical resistance associated with annealing. XPS valence band measurements of the n^+a-Si/ITO structure revealed that the upper edge of the Si valence band shifted to a lower binding energy after annealing at 250℃. These results suggest that the increase in electrical resistance was mainly caused by the increase in contact resistance. The above-mentioned result was also confirmed by secondary ion mass spectrometry (SIMS) analysis and resistance measurements.

• 社団法人応用物理学会の論文
• 1999-09-15

著者

• YABUHARA Hidehiko

  Corporate Manufacturing Engineering Center, Toshiba Corporation

• Kataoka Yoshinori

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Yabuhara H

  Toshiba Corp. Yokohama Jpn

• Yabuhara Hidehiko

  Corporate Manufacturing Engineering Center Toshiba Corporation

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• Evaluation of n^+a-Si Contact with Indium Tin Oxide by X-Ray Photoelectron Spectroscopy Valence Band Measurement
• Selective Plasma Surface Modification of Resist for Patterning Hydrophobic and Hydrophilic Regions
• Tight-Binding Quantum Chemical Molecular Dynamics Study on Depth Profile Prediction in Low Energy Boron Implantation Process

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