Selective Plasma Surface Modification of Resist for Patterning Hydrophobic and Hydrophilic Regions

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概要

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• A plasma surface modification process was investigated to realize a fine pattern on a surface that consists of highly controlled hydrophilic and hydrophobic areas. Capacitively and inductively coupled plasmas (CCP and ICP) using CF4 and argon gases were used to increase the hydrophobicity of a resist surface selectively on an indium tin oxide (ITO) surface. By plasma exposure, both the hydrophobicity of the resist and the hydrophilicity of the ITO surface were increased. The difference between the contact angle of water on the plasma-exposed surface of the resist and that on the ITO surface was larger in ICP than in CCP. On the basis of the results of the plasma analyses and X-ray photoelectron spectroscopy of the surfaces, this difference is considered to be due to the high densities of CF3 and CF3+ generated in ICP with the generation of CF2, CF, CF2+, and CF+ at reduced amounts because of the low electron temperature in ICP.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-03-25

著者

• Okudaira Koji

  Graduated School Of Science And Technology Chiba University

• Shinmura Tadashi

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Kataoka Yoshinori

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Ikagawa Masakuni

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-Isogo, Isogo-ku, Yokohama 235-0017, Japan

• Tohno Ichiro

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-Isogo, Isogo-ku, Yokohama 235-0017, Japan

• Ikagawa Masakuni

  Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan

• Ueno Nobuo

  Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan

• Kataoka Yoshinori

  Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan

• Sugita Kazuyuki

  Division of Quality Materials Science, Graduate School of Science and Technology, Chiba University, Chiba 263-8522, Japan

• Okudaira Koji

  Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan

• Shinmura Tadashi

  Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan

関連論文

• Antiferromagnetic Domain Structure Imaging of Cleaved NiO(100) Surface Using Nonmagnetic Linear Dichroism at O K Edge : Essential Effect of Antiferromagnetic Crystal Distortion(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Prop
• Low Energy Electron Transmission Study of Indium/(perylene-3,4,9,10-tetracarboxylic dianhydride) System
• Surface Images of SiO_2/Si(100) Pattern using Electron Emission Microscopy with Metastable Atoms, Photons and Low-Energy Electrons
• Reaction at the Outermost Surface Selectively Induced by Metastable-Atom Beams
• Surface States of Hydrogen-terminated Si(111)by Metastable Atom Electron Spectroscopy and Angle-resolved Ultraviolet Photoelectron Spectroscopy
• Dry Etching Characteristics of Si-based Materials Using CF_4/O_2 Atmospheric-Pressure Glow Discharge Plasma
• Microwave-Excited Large-Area Plasma Source Using a Slot Antenna
• Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model(Nuclear Science, Plasmas, and Electric Discharges)
• Evaluation of n^+a-Si Contact with Indium Tin Oxide by X-Ray Photoelectron Spectroscopy Valence Band Measurement
• Study on Surface Modification of Indium Tin Oxide and Resist Surfaces Using CF4/O2 Plasma for Manufacturing Organic Light-Emitting Diodes by Inkjet Printing
• Outermost Surface Reactions of Molecular Thin Films Induced by Metastable-Atom Impacts
• Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes
• Molecular Orientation and Aggregation of Titanyl Phthalocyanine Molecules on Graphite Substrates: Effects of Surface Topography of the Substrate
• Selective Plasma Surface Modification of Resist for Patterning Hydrophobic and Hydrophilic Regions

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