Single Silicon Atom Detection on a Tungsten Tip
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概要
- 論文の詳細を見る
With a conventional field ion microscope (FIM), we characterized the tip after indentation by a scanning tunneling micro-scope (STM). Bright spots are observed at a low applied voltage before the observed voltage of the pole structure of W(110), which are likely to consist of Si atoms. Next, by the AP with a position detector, we performed the chemical identification of a bright spot in the FIM image. A single atom is detected only when a pulse voltage is applied. The mass and the position of the detected atom are simultaneously determined. The identified mass is that of a doubly charged single Si ion. The position determined by the AP with a position detector coincides with the disappeared spot in the FIM image after the pulse voltage application. In other words, the bright spot consists of a single Si atom. This result suggests that identification of atoms captured on the tip by STM atom manipulation can be realized.
- 社団法人応用物理学会の論文
- 1999-06-30
著者
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)
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Tokumoto Hiroshi
Joint Research For Atom Technology National Institute For Advanced Interdisiplinary Research
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Shimizu Tetsuo
Joint Research for Atom Technology, National Institute for Advanced Interdisiplinary Research
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Shimizu Tetsuo
Joint Research For Atom Technology National Institute For Advanced Interdisiplinary Research
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