Nanoscale Indentation on Si(111) Surfaces with Scanning Tunneling Microscope (<Special Issue> Scanning Tunneling Microscopy)
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概要
- 論文の詳細を見る
We have investigated the mechanism of Si atom removal by measuring the current during formation of a point contact between the W tip of a scanning tunneling microscope (STM) and the Si(111)-7×7 surface. The stepwise drops observed in the current during tip retraction may be attributed to the reduction of the contact area in an atom-by-atom manner. Based on the estimation of the contact size, it was concluded that the adatoms were removed by chemical adhesion of the Si atoms with the W tip. The chemical adhesion was assisted by the mechanical force applied to the Si surface, contact potential and current induced local heating. A trilayer was removed by field evaporation with the assistance of electromigration on the Si surface.
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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Komeda Tadahiro
Joint Research Center For Atom Technology (jrcat) Angstronn Technology Partnership (atp)
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Komeda Tadahiro
Joint Research Center For Atom Technology-angstrom Technology Partnership:(present Address) Texas In
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)
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Hasunuma Ryu
Joint Research Center For Atom Technology-angstrom Technology Partnership
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Tokumoto Hiroshi
Joint Research Center For Atom Technology National Institute For Advanced Interdisciplinary Research
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