Effect Of Inp Passivation On Carrier Recombination in In_xGa_<1-x>As/GaAs Surface Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Lipsanen H
Helsinky Univ. Technol. Otakaari Fin
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Sopanen M
Helsinky Univ. Technol. Otakaari Fin
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Sandmann Jorg
Sektion Physik Ludwig-maximilians-university
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Feldmann Jochen
Sektion Physik Ludwig-maximilians-university
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AHOPELTO Jouni
VTT Electronics
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Ahopelto J
Vtt Electronics
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Focused-Ion-Beam Surface Modification for Selective Growth of InP Wires on GaAs
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots