Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
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概要
- 論文の詳細を見る
Low-temperature photoluminescence (PL), tunable between 1.3 and 1.7 μm, is obtained from strain-induced quantum dots (SIQDs). The quantum dots are fabricated by growing self-assembled InAs stressor islands on top of a near-surface InGaAs(P)/InP quantum well (QW). The structure is tuned by varying the composition of the QW and its distance from the surface. Time-resolved PL measurements reveal that QD relaxation and recombination time constants (0.55 and 0.50 ns) are virtually independent of the composition of the nearly lattice-matched InGaAsP layer. Also, decreasing the QW distance from the surface is shown to shift the energy states and significantly diminish the PL intensity of the SIQD.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-07-10
著者
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Riikonen Juha
Optoelectronics Laboratory Helsinki University Of Technology
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Mattila Marco
Optoelectronics Laboratory Helsinki University Of Technology
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Sormunen Jaakko
Optoelectronics Laboratory Helsinki University Of Technology
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Koskenvaara Hannu
Optoelectronics Laboratory Helsinki University Of Technology
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Koskenvaara Hannu
Optoelectronics Laboratory, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
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Lipsanen Harri
Optoelectronics Laboratory, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
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Sopanen Markku
Optoelectronics Laboratory, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
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Riikonen Juha
Optoelectronics Laboratory, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots