Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
スポンサーリンク
概要
- 論文の詳細を見る
Fabrication of quantum rings (QRs) by transforming self-assembled InAs islands on InP is studied. The islands are annealed in-situ in a tertiarybutylphosphine ambient at varying temperatures. The duration of the annealing step is also varied. A partial capping of the InAs islands is not required to achieve the morphological change into rings. The evolution of the transformation is observed ex-situ by atomic force microscopy and photoluminescence measurements. The morphological transformation is accompanied by a compositional change of InAs into InAsP. The results support our conclusions that the QR formation is mostly due to strain-driven kinetic effects.
- Japan Society of Applied Physicsの論文
- 2005-10-10
著者
-
Riikonen Juha
Optoelectronics Laboratory Helsinki University Of Technology
-
Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
-
Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
-
Sormunen Jaakko
Optoelectronics Laboratory Helsinki University Of Technology
-
Sopanen Markku
Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
-
Hakkarainen Teppo
Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
-
Riikonen Juha
Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
-
Lipsanen Harri
Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots