Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
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概要
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The current–voltage ($I$–$V$) measurements on Pt/InN Schottky barrier diodes in the temperature range 10–280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of $m^{*}_{\bot} = 0.237 m_{0}$ is obtained.
- 2009-07-25
著者
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Rangel-Kuoppa Victor-Tapio
Optoelectronics Laboratory, Helsinki University of Technology, P. O. Box 3500, 02015 Helsinki, Finland
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Suihkonen Sami
Optoelectronics Laboratory, Helsinki University of Technology, P. O. Box 3500, 02015 Helsinki, Finland
-
Lipsanen Harri
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland
-
Suihkonen Sami
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland
-
Rangel-Kuoppa Victor-Tapio
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 Helsinki, Finland
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