Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells

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概要

• 論文の詳細を見る

• Comparison of Ge and GaAs substrates for the growth of InGaAs and GaInNAs quantum well structures is presented. Quantum well structures are grown simultaneously on both substrates by metalorganic vapor phase epitaxy. Photoluminescence measurements show lower peak energies for the structures grown on Ge than on GaAs. The luminescence redshift between structures grown on Ge and GaAs increases with increasing nitrogen precursor flow. X-ray diffraction analyses indicate that this is due to enhanced N incorporation efficiency on Ge.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2005-11-10

著者

• Lipsanen Harri

  Optoelectronics Laboratory Helsinki University Of Technology

• Mattila Marco

  Optoelectronics Laboratory Helsinki University Of Technology

• Reentila Outi

  Optoelectronics Laboratory Micronova Helsinki University Of Technology

• Knuuttila Lauri

  Optoelectronics Laboratory Micronova Helsinki University Of Technology

• Lipsanen Harri

  Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland

• Mattila Marco

  Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland

関連論文

• Longitudinal Stark Effect in Parabolic Quantum Dots
• Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
• Tailoring of Energy Levels in Strain-Induced Quantum Dots
• Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
• Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
• InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
• Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
• Metal Contacts on InN: Proposal for Schottky Contact
• Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
• Longitudinal Stark Effect in Parabolic Quantum Dots
• Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
• Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
• InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
• Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots

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