InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
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概要
- 論文の詳細を見る
A material system utilizing InGaAs/InP quantum wells (QWs) and InAs islands to create strain-induced quantum dots (SIQDs) is introduced. The SIQDs are fabricated in situ by growing self-organized stressor-islands on top of a near-surface QW. The confinement of carriers in the SIQDs is studied by photoluminescence. Emission peak from the SIQD ground state transition is redshifted by 64 meV from the quantum well peak. Low-temperature luminescence from the SIQD is observed around 0.8 eV (1.55 μm). Altogether, four SIQD states are identified having a level splitting of 15 meV.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-04-10
著者
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Riikonen Juha
Optoelectronics Laboratory Helsinki University Of Technology
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Mattila Marco
Optoelectronics Laboratory Helsinki University Of Technology
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Sormunen Jaakko
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory, Helsinki University of Technology, P.O.Box 3500, FIN-02015 TKK, Finland
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Riikonen Juha
Optoelectronics Laboratory, Helsinki University of Technology, P.O.Box 3500, FIN-02015 TKK, Finland
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots