InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-05-10
著者
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Riikonen Juha
Optoelectronics Laboratory Helsinki University Of Technology
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Mattila Marco
Optoelectronics Laboratory Helsinki University Of Technology
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SORMUNEN Jaakko
Optoelectronics Laboratory, Helsinki University of Technology
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Sormunen Jaakko
Optoelectronics Laboratory Helsinki University Of Technology
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots