Longitudinal Stark Effect in Parabolic Quantum Dots
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概要
- 論文の詳細を見る
We present an experimental and theoretical investigation of the longitudinal quantum confined Stark effect in strain-induced parabolic InGaAs quantum dots. The electric field is applied in the plane perpendicular to the growth axis (quantum well plane), through a sub-micron gap opened in a metallic contact, which contains just a few dots. The changes in the microphotoluminescence ($\mu$-PL) spectra were measured versus the bias, at low temperature. Due to the device geometry, the electric field profile in the gate is not constant resulting in an asymmetric Stark effect as a function of the applied field polarity. Calculations of the field profile in the conatct gap and of the distorsion of the parabolic-like potential as a function of the applied field have been made in order to correlate the observed changes in the electro-optical properties of the dots with the carrier spill over and wavefunction modifications under electric field.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-03-30
著者
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Visconti Paolo
Unita Infm Universita Degli Studi Di Lecce
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Cingolani Roberto
Unita Infm Universita Degli Studi Di Lecce
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Drufva T.
Laboratory Of Computational Engineering Helsinki University Of Technology
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Rinaldi Ross
Unita Infm Universita Degli Studi Di Lecce
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Tulkki Jukka
Laboratory Of Computational Engineering Helsinki University Of Technology
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Melcarne Angelo
Unita Infm Universita Degli Studi Di Lecce
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Degiorgi Milena
Unita Infm Universita Degli Studi Di Lecce
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Devittorio Massimo
Unita Infm Universita Degli Studi Di Lecce
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Visconti Paolo
Unità INFM, Università degli Studi di Lecce, Via Arnesano, 7310 Lecce, Italy
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Cingolani Roberto
Unità INFM, Università degli Studi di Lecce, Via Arnesano, 7310 Lecce, Italy
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Rinaldi Ross
Unità INFM, Università degli Studi di Lecce, Via Arnesano, 7310 Lecce, Italy
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Tulkki Jukka
Laboratory of Computational Engineering, Helsinki University of Technology, P.O.Box 9400, FIN-02015 HUT, Finland
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Melcarne Angelo
Unità INFM, Università degli Studi di Lecce, Via Arnesano, 7310 Lecce, Italy
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots