Longitudinal Stark Effect in Parabolic Quantum Dots
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
-
Visconti Paolo
Unita Infm Universita Degli Studi Di Lecce
-
Cingolani Roberto
Unita Infm Universita Degli Studi Di Lecce
-
RINALDI Ross
Unita INFM, Universita degli Studi di Lecce
-
DEGIORGI Milena
Unita INFM, Universita degli Studi di Lecce
-
DEVITTORIO Massimo
Unita INFM, Universita degli Studi di Lecce
-
MELCARNE Angelo
Unita INFM, Universita degli Studi di Lecce
-
LIPSANEN Harri
Optoelectronics Laboratory, Helsinky University of Technology
-
SOPANEN Markku
Optoelectronics Laboratory, Helsinky University of Technology
-
DRUFVA T.
Laboratory of Computational Engineering, Helsinki University of Technology
-
TULKKI Jukka
Laboratory of Computational Engineering, Helsinki University of Technology
-
Drufva T.
Laboratory Of Computational Engineering Helsinki University Of Technology
-
Rinaldi Ross
Unita Infm Universita Degli Studi Di Lecce
-
Tulkki Jukka
Laboratory Of Computational Engineering Helsinki University Of Technology
-
Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
-
Lipsanen Harri
Optoelectronics Laboratory Helsinky University Of Technology
-
Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
-
Sopanen Markku
Optoelectronics Laboratory Helsinky University Of Technology
-
Melcarne Angelo
Unita Infm Universita Degli Studi Di Lecce
-
Degiorgi Milena
Unita Infm Universita Degli Studi Di Lecce
-
Devittorio Massimo
Unita Infm Universita Degli Studi Di Lecce
関連論文
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes
- Metal Contacts on InN: Proposal for Schottky Contact
- Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
- Longitudinal Stark Effect in Parabolic Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells
- Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
- InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
- Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots