AHOPELTO Jouni | VTT Electronics
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概要
関連著者
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AHOPELTO Jouni
VTT Electronics
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Lipsanen Harri
Optoelectronics Laboratory Helsinki University Of Technology
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Sopanen Markku
Optoelectronics Laboratory Helsinki University Of Technology
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Ahopelto J
Vtt Electronics
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Lipsanen H
Helsinky Univ. Technol. Otakaari Fin
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Sopanen M
Helsinky Univ. Technol. Otakaari Fin
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Feldmann Jochen
Sektion Physik Ludwig-maximilians-university
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Ochiai Yukinori
Fundamental Research Laboratories Nec Corporation
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AHOPELTO Jouni
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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USUI Akira
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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LEZEC Henri
Fundamental Research Laboratories, NEC Corporation
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Lezec Henri
Fundamental Research Laboratories Nec Corporation
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Usui Akira
Quantum Wave Project Erato Reseach Development Corporation Of Japan (jrdc)
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Usui Akira
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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Sandmann Jorg
Sektion Physik Ludwig-maximilians-university
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Ahopelto Jouni
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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Lipsanen Harri
Optoelectronics Laboratory, Helsinki University of Technology, Otakaari 7A, FIN-02150
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Feldmann Jochen
Sektion Physik, Ludwig-Maximilians-University, Amalienstrasse 54, D-80799 Munich,
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Sandmann Jörg
Sektion Physik, Ludwig-Maximilians-University, Amalienstrasse 54, D-80799 Munich,
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Ahopelto Jouni
VTT Electronics, Tekniikantie 17, FIN-02150 Espoo, Finland
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Sandmann Jörg
Sektion Physik, Ludwig-Maximilians-University, Amalienstrasse 54, D-80799 Munich,
著作論文
- Focused-Ion-Beam Surface Modification for Selective Growth of InP Wires on GaAs
- Effect Of Inp Passivation On Carrier Recombination in In_xGa_As/GaAs Surface Quantum Wells
- Tailoring of Energy Levels in Strain-Induced Quantum Dots
- Effect Of Inp Passivation On Carrier Recombination in InxGa1-xAs/GaAs Surface Quantum Wells