An Investigation on the Short Channel Effect for 0.1 μm Fully Depleted SOIMOSFET Using Equivalent One Dimensional Model
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概要
- 論文の詳細を見る
An analytical model for the short channel effect for the silicon on insulator metal oxide semiconductor field effect transistor (SOIMOSFET) is proposed. The two dimensional potential problem is reduced to a one dimensional problem, using a virtual electrode which is equivalent to the drain and the source electrodes. The behavior for the short channel effect is also discussed using this model.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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黄 俐昭
Necシリコンシステム研究所
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Kato Haruo
Microelectronics Reserch Laboratory Nec Corp.
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Koh R
Silicon Systems Research Labs.
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Koh Risho
Microelectronics Reserch Laboratory Nec Corp.
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Koh Risho
Microelectronics Res. Labs. Nec Corp.
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