Combination of Photo and Atomic Force Microscope Lithographies by Use of arm Organosilane Monolayer Resist
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概要
- 論文の詳細を見る
Two lithographies having different resolutions of micro and nanometer scales have been combined using asingle organosilane monolayer as a resist for both, This monolayer resist was first patterned by irradiation with deep ultraviolet light through a photomask. Prior to the second patterning by scanning probe lithography, the photopatterned monolayer was observed by an atomic force microscope (AFM) in lateral force microscopy (LFM)mode. Since the photodegraded monolayer showed stronger lateral force than the unirradiated monolayer, the photogenerated pattern on the monolayer was clearly imaged. Using this LFM image, the AFM probe was aligned on the photofabricated pattern before drawing additional patterns by scanning probe lithography.
- 社団法人応用物理学会の論文
- 1997-07-15
著者
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SUGIMURA Hiroyuki
Tsukuba Research Lab., Nikon Co.
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NAKAGIRI Nobuyuki
Tsukuba Research Lab., Nikon Co.
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Sugimura H
Department Of Materials Processing And Engineering Graduate School Of Engineering Nagoya University
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Sugimura Hiroyuki
Tsukuba Research Laboratory Nikon Co.:(present Address)depeartrnent Of Materials Processing Enginerr
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Sugimura Hiroyuki
Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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