Scanning Probe Lithography Using a Trimethylsilyl Organosilane Monolayer Resist

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概要

• 論文の詳細を見る

• A trimethylsilyl organosilane monolayer was applied as a self-developing resist for scanning probe microscope (SPM) lithography under ambient conditions. Both a scanning tunneling microscope and an atomic force microscope with a conductive probe were applied and shown to be effective for this lithography. The resist was prepared on a silicon (Si) substrate by chemical vapor deposition, and was patterned throug the localized degradation of the organosilane monolayer induced by scanning an SPM tip while positively (+5 ∼ +10 V) biasing the substrate. The degradation rate was enhanced by increasing the concentration of atmospheric water vapor or oxygen. The patterning mechanism was identified as tip-induced anodic oxidation, i.e., scanning probe anodization. The pattern was transferred to the Si substrate through selective chemical etching in which the degraded monolayer regions served as etching windows. Consequently, fine grooves as narrow as 30 nm could be fabricated.

• 社団法人応用物理学会の論文
• 1996-06-30

著者

• SUGIMURA Hiroyuki

  Tsukuba Research Lab., Nikon Co.

• NAKAGIRI Nobuyuki

  Tsukuba Research Lab., Nikon Co.

• OKIGUCHI Keiko

  Tsukuba Research Laboratory, Nikon Co.

• Okiguchi Keiko

  Tsukuba Research Laboratory Nikon Co.

関連論文

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• Chemical Approach to Nanofabrication: Modifications of Silicon Surfaces Patterned by Scanning Probe Anodization
• Data Processing in the Extraction of Properties from Force Curves for Mapping
• Scanning Probe Lithography Using a Trimethylsilyl Organosilane Monolayer Resist
• Combination of Photo and Atomic Force Microscope Lithographies by Use of arm Organosilane Monolayer Resist
• Self-Assembled Alkanethiol Monolayer on Patterned Gold Fabricated by Scanning Probe Anodization-Based Nanolithography

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