Stress-Induced Raman Frequency Shift in CuInSe_2 Thin Films Prepared by Laser Ablation
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概要
- 論文の詳細を見る
Thin films of CuInSe_2 have been prepared by laser ablation using a Nd:YAG laser at substrate temperatures up to 450℃. Raman scattering experiments have shown that the frequency of the A_1 phonon mode for these films shifts markedly to higher frequencies similarly with CuInSe_2 single crystals under compression. The existence of compressive stress in the films has been confirmed by observing the bending of a cover glass used as substrate. The magnitude and temperature dependence of the stress estimated from the frequency shifts agree with those determined from the degree of bending.
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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Taguchi Isao
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Taguchi Isao
Department Of Cardiology And Pneumology Dokkyo Medical University School Of Medicine
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EZUMI Hiromichi
Department of Fundamental Education, Shimane College of Nursing
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Taguchi Isao
Department Of Physics Shimane Medical University
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Osono H
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osono H
Faculty Of Engineering Hiroshima Kokusai Gakuin University
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Ezumi H
Shimane Coll. Nursing Shimane Jpn
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Ezumi Hiromichi
Hiroshima Denki Institute Of Technology
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Ezumi Hiromichi
Department Of Electrical Engineering Hiroshima Denki Institute Of Technology:department Of Fundament
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OSONO Hiroto
Department of Technology, Hiroshima Kokusai Gakuin University
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KEITOKU Susumu
Hiroshima Women's University
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TAMARU Takeyoshi
Department of Electrical Engineering, Hiroshima-Denki Institute of Technology
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Keitoku S
Hiroshima Women's Univ. Hiroshima Jpn
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Keitoku Susumu
Hiroshima Wamen's College
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Tamaru Takeyoshi
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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