Preparation of p-Type CdS Thin Film by Laser Ablation
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概要
- 論文の詳細を見る
A new method to prepare p-type CdS thin film was investigated, in which the laser ablation was applied to a mixed target of CdS and Cu. The p-type CdS film was obtained from a target containing more than 5 at% Cu. Composition analysis showed that Cu content in the film was about one-fifth of that in target. The formation of p-type CdS film was also confirmed by the photovoltaic effect of the p-n junction which was constructed by laminating n-type CdS film and p-type CdS film.
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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Ohta Mitsuo
Faculty of Engineering,Hiroshima University
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EZUMI Hiromichi
Department of Fundamental Education, Shimane College of Nursing
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Osono H
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osono H
Faculty Of Engineering Hiroshima Kokusai Gakuin University
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Ezumi H
Shimane Coll. Nursing Shimane Jpn
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Ezumi Hiromichi
Hiroshima Denki Institute Of Technology
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Ezumi Hiromichi
Department Of Electrical Engineering Hiroshima Denki Institute Of Technology:department Of Fundament
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OSONO Hiroto
Department of Technology, Hiroshima Kokusai Gakuin University
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KEITOKU Susumu
Hiroshima Women's University
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Keitoku S
Hiroshima Women's Univ. Hiroshima Jpn
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Keitoku Susumu
Hiroshima Wamen's College
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Ohta Mitsuo
Faculty Of Engineering Kinki University
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Ohta Mitsuo
Faculty Of Engineering Hiroshima University
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Ohta Mitsuo
Faculty of Eng.,Kinki Univ.Umenobe 1,Takaya,Higashi-Hiroshima,729-2116 Japan
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