Zero-Bias Resistance Peak in Oxide-Semiconductor Junctions
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-09-15
著者
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MIYAKAWA Nobuaki
Advanced Technology Center, Fuji Xerox Co.
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Tsuda Nobuo
National Institute For Researches In Inorganic Materials
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Tsuda Nobuo
Department Of Applied Physics Science University Of Tokyo
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AKAHANE Takashi
National Institute for Materials Science
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Akahane Takashi
National Institute For Researches In Inorganic Materials
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SHIMADA Daisuke
Department of Physics, Tokyo Institute of Technology
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Shimada D
Department Of Applied Physics Science University Of Tokyo
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Shimada Daisuke
Department Of Physics Tokyo Institute Of Technology
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Shimada Daisuke
Department Of Applied Physics Science University Of Tokyo
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Tsuda N
Sci. Univ. Tokyo Tokyo
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Miyakawa Nobuaki
Department of Applied Physics, Science University of Tokyo
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TAMURA Kazuaki
Department of Applied Physics, Science University of Tokyo
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Miyakawa N
Advanced Technology Center Fuji Xerox Co.
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Miyakawa Nobuaki
Department Of Applied Physics The Science University Of Tokyo
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Akahane T
National Institute For Researches In Inorganic Materials
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Tamura Kazuaki
Department Of Applied Physics Science University Of Tokyo
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Tsuda Nobuo
Department Of Applied Physics Saience University Of Tokyo
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Shimada Daisuke
Department Of Applied Chemistry Institute Of Science And Engineering Chuo University
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