Lifetime Spectra of Positrons in GaAs Deformed by Ga- and As-Bending
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概要
- 論文の詳細を見る
Positron lifetime measurements have been performed in plastically bent n-type GaAs single crystals in which either Ga- or As-dislocations were introduced. τ_1 and I_1 were decreased by deformation, while I_2 was increased. Following the trapping model, the trapping rates were deduced experimentally, which in turn gave the cross widths of the Ga- and As-dislocations as 2.2×10^2Å and 2.9×10^2Å, respectively. In terms of Read's model for the electric charge of the dislocation in semiconductors, the fractions of the dangling bonds occupied by electrons for the Ga- and As-dislocation were obtained as 0.65 and 0.75, respectively.
- 社団法人日本物理学会の論文
- 1973-01-05
著者
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Tsuda Nobuo
National Institute For Researches In Inorganic Materials
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NOGUCHI Masaharu
National Laboratory for High Energy Physics
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KURAMOTO Eiichi
The Institute for Solid State Physics, The University of Tokyo
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TAKEUCHI Shin
The Institute for Solid State Physics, The University of Tokyo
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Kuramoto Eiichi
The Institute For Solid State Physics The University Of Tokyo
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NOGUCHI Masayasu
Japan Atomic Energy Research Institute
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CHIBA Toshinobu
National Institute for Researches in Inorganic Materials
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NOGUCHI Masayasu
Radioisotope School, Japan Atomic Energy Research Institute
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Matsuno N
Department Of Physics Faculty Of Science Science University Of Tokyo
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Chiba Toshinobu
National Institute For Research In Inorganic Materials
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Tsuda Nobuo
National Institute For Research In Inorganic Materials
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Takeuchi Shin
The Institute For Solid State Physics The University Of Tokyo
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