Enhanced Glide of Dislocations in GaAs Single Crystals by Electron Beam Irradiation
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概要
- 論文の詳細を見る
Influence of 30 keV electron beam irradiation on the mobility of α-dislocations in n-GaAs has been investigated at temperatures between 290 K and 470 K under a shear stress of 40 MN/m^2 using a scanning electron microscope with cathodoluminescence mode. The effect of electron irradiation (0.39 A/m^2) is equivalent to a temperature rise of 80-180 K in the testing temperature range, which is not explained by a heating effect of the lattice by the irradiation. The activation energy of the dislocation motion is decreased from 0.95 eV to 〜0.24 eV by the irradiation. The effect is explained in terms of recombination-enhanced glide of dislocations.
- 社団法人応用物理学会の論文
- 1981-03-05
著者
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Maeda Koji
The Institute For Solid State Physics The University Of Tokyo
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Takeuchi Shin
The Institute For Solid State Physics The University Of Tokyo
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MAEDA Koji
The Institute for Solid State Physics, The University of Tokyo
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