Tunneling Conductance of a Bi_2Sr_2CaCu_2O_8-GaAs Junction : Temperature Dependence of the Gap
スポンサーリンク
概要
- 論文の詳細を見る
Good correspondence between the structure in the tunneling conductance curveand the phonon density of states shows that they are really due to phonons at least ina single phonon frequency range. The structures disappeared at T. suggesting thatthey are due to an exchange of phonons and not due to the inelastic tunneling. Fromthe phonon positions, the gap parameter was found to have the BCS like temperaturedependence. 2A(O)/k.T.=?/.1. It is isotroppic in the Cub. plane. A conventionalmethod to determine the gap from the conductance peak-to-peak distance is not bad.
- 社団法人日本物理学会の論文
- 1990-07-15
著者
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MIYAKAWA Nobuaki
Advanced Technology Center, Fuji Xerox Co.
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Tsuda Nobuo
National Institute For Researches In Inorganic Materials
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Tsuda Nobuo
Department Of Applied Physics Science University Of Tokyo
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SHIMADA Daisuke
Department of Physics, Tokyo Institute of Technology
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Shimada D
Department Of Applied Physics Science University Of Tokyo
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Shimada Daisuke
Department Of Physics Tokyo Institute Of Technology
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Shimada Daisuke
Department Of Applied Physics Science University Of Tokyo
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Tsuda N
Sci. Univ. Tokyo Tokyo
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Miyakawa Nobuaki
Department of Applied Physics, Science University of Tokyo
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KIDO Tadaharu
Department of Applied Physics,Science University of Tpkyo
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Miyakawa N
Advanced Technology Center Fuji Xerox Co.
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Miyakawa Nobuaki
Department Of Applied Physics The Science University Of Tokyo
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Kido Tadaharu
Department Of Applied Physics Science University Of Tpkyo
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Tsuda Nobuo
Department Of Applied Physics Saience University Of Tokyo
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Shimada Daisuke
Department Of Applied Chemistry Institute Of Science And Engineering Chuo University
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