Fine Structure in the Tunneling Conductance of a Bi_2Sr_2CaCu_2O_8-GaAs Junction

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概要

• 論文の詳細を見る

• A fine structure was observed above the gap voltage in tlte tunneling conductanceof a Bi.Sr.CaCu.0.-GaAs jtunction at 4.2 K. It is due to electron-phonon interaction,suggesting that this superconductivity is essentially due to phonons.

• 社団法人日本物理学会の論文
• 1989-02-15

著者

• MIYAKAWA Nobuaki

  Advanced Technology Center, Fuji Xerox Co.

• Tsuda Nobuo

  National Institute For Researches In Inorganic Materials

• Tsuda Nobuo

  Department Of Applied Physics Science University Of Tokyo

• SHIMADA Daisuke

  Department of Physics, Tokyo Institute of Technology

• Shimada D

  Department Of Applied Physics Science University Of Tokyo

• Shimada Daisuke

  Department Of Physics Tokyo Institute Of Technology

• Shimada Daisuke

  Department Of Applied Physics Science University Of Tokyo

• Tsuda N

  Sci. Univ. Tokyo Tokyo

• Miyakawa Nobuaki

  Department of Applied Physics, Science University of Tokyo

• KIDO Tadaharu

  Department of Applied Physics,Science University of Tpkyo

• Miyakawa N

  Advanced Technology Center Fuji Xerox Co.

• Miyakawa Nobuaki

  Department Of Applied Physics The Science University Of Tokyo

• Kido Tadaharu

  Department Of Applied Physics Science University Of Tpkyo

• Tsuda Nobuo

  Department Of Applied Physics Saience University Of Tokyo

• Shimada Daisuke

  Department Of Applied Chemistry Institute Of Science And Engineering Chuo University

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