Radiation Damage of Silicon Junction Photodiodes by Evaporation Neutrons from Nuclear Spallation Reactions with 12 GeV Protons
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概要
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Radiation damage effects of silicon PIN photodiodes were studied by using evaporation neutrons from nuclear spallation reactions of a copper target with 12 GeV protons. Photodiode samples were placed in the backward direction from the copper target and neutron flux was determined by the foil activation method. The average neutron energy was estimated to be about 6 MeV. The damage effects were observed in terms of the increase of leakage current with reverse voltage which is expected to be approximately proportional to radiation dose of neutrons. The present result of the leakage current constant is of the order of 3 to 4 times those measured by using identical photodiodes exposed to reactor neutrons with the average energy of about 2 MeV. The observed energy dependence of the leakage current constant can be qualitatively explained by the NRT model.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Kondo Takahiko
National Laboratory for High Energy Physics KEK
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Mori Shigeki
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Masami
Institute of Statistical Mathematics
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Asano Yuzo
Institute Of Applied Physics University Of Tsukuba
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NOGUCHI Masaharu
National Laboratory for High Energy Physics
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Taketani Atsushi
Department Of Physics Hiroshima University
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Arima Tatsumi
Institute Of Applied Physics University Of Tsukuba
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Ohsugi Takashi
Department Of Astrophysics Nagoya University
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Kondo Takahiko
National Laboratory for High Energy Physics, KEK, Tsukuba, Ibaraki 305
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Arima Tatsumi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305
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Ohsugi Takashi
Department of Physics, Hiroshima University, Hiroshima 730
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