Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching Techniques

概要

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Dislocations induced by diffusion of phosphorus into (111) surface of silicon specimen are studied by X-ray and etching techniques. For X-ray observation, Cu target is employed to obtain sharp contrast of images. In order to observe individual dislocations separately by X-ray diffraction micrography, a specimen with low density of dislocation networks is used. The Burgers vectors of the dislocations are determined. The dislocations with the Burgers vectors parallel and inclined to the surface are observed. It is concluded that the dislocations are generated by climb as well as by slip. In the case of high dislocation density, a replica of etch -patterns is observed with an electron microscope. It is found by etching technique that some parts of the networks bow deep inside the specimen. Dislocations passing through a specimen are also found.
社団法人応用物理学会の論文
1968-03-05