Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-03-05
著者
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Yoshida Masayuki
Electrical Communication Laboratory
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Kanamori Shuichi
Electrical Communication Laboratory
関連論文
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching Techniques
- Behavior of Nickel as an Impurity in Silicon
- Numerical Solutions of Basic Equations of Dissociative Diffusion
- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon
- Reflection Electron Diffraction of Gold-Diffused Silicon
- Dissociative Diffusion of Gold in Silicon
- Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
- Criterions for the Assumptions of Thermal Equilibrium of Interstitial Atoms and of Vacancies in Dissociative Diffusion