Behavior of Nickel as an Impurity in Silicon
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概要
- 論文の詳細を見る
Distribution and precipitation of nickel in silicon and effect of nickel upon resistivity were studied by use of ^<63>Ni, by an infrared, an optical and an X-ray diffraction microscopes and by four points method. The followings are concluded. During the heating nickel is dissolved interstitially to the solubility. Diffusion constant of the interstitial nickel is 10^<-4∼-5> cm^2/sec. Its migration energy is very small and may be comparable with that of an interstitial silicon reported by Watkins. During the cooling the interstitial nickel precipitates at the surface and also in the interior. Number of an electrically active nickel is very small compared to that of the interstitial nickel. Some kind of lattice defect is formed at a precipitation site. It is fairly stable against the heat treatment and plays a role of nucleus of the precipitates on and after the second heat treatment.
- 社団法人応用物理学会の論文
- 1964-09-15
著者
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Yoshida Masayuki
Electrical Communication Laboratory
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Furusho Katsuhisa
Electrical Communication Laboratory
関連論文
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- Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography
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- Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography
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