Effects of Vacuum-Drying on the Surface Properties of Germanium Transistor
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概要
- 論文の詳細を見る
It was investigated how the characteristics of germanium transistors, especially the ground-emitter current-amplification factor, h_<fe>, depend upon the process of vacuum-drying. It was found that the dominant factor was the adsorption and the desorption of water on the Ge surface. The surface contamination due to oil vapor from the mechanical vacuum pump also showed a great effect.
- 社団法人応用物理学会の論文
- 1962-09-15
著者
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Furusho Katsuhisa
Electrical Communication Laboratory
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ONO Kazumasa
Electrical Communication Laboratory
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Furusho K.
Electrical Communication Laboratory
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- Effects of Vacuum-Drying on the Surface Properties of Germanium Transistor
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