Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography

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概要

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• The effects of heat-treatments on oxygen-doped silicon single crystals were studied by X-ray diffraction micrography using extinction contrast. For silicon crystals of $1\times 10^{18}$ atoms/cm3 oxygen-concentration, characteristic intensity increase were observed after heat-treatment at 1000°C for several hours, and individual images were resolved after heat-treatment at 1200°C for a few fours. From variation in the shape of images with diffracting planes, it was concluded that the images were due to the disc-shaped precipitates of silicon oxide parallel to {111} planes.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1964-04-15

著者

• Furusho Katsuhisa

  Electrical Communication Laboratory

関連論文

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• Study of Annealed Silicon Single Crystals by X-Ray Diffraction Micrography
• Effects of Vacuum-Drying on the Surface Properties of Germanium Transistor
• Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography
• Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography

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