Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1964-04-15

著者

• Furusho Katsuhisa

  Electrical Communication Laboratory

関連論文

• Behavior of Nickel as an Impurity in Silicon
• Study of Annealed Silicon Single Crystals by X-Ray Diffraction Micrography
• Effects of Vacuum-Drying on the Surface Properties of Germanium Transistor
• Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography
• Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography

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