Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon

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概要

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• Behavior of electrically active nickel which acts as an acceptor in silicon is studied. Energy level of 0.41±0.01eV below the conduction band at about 330°K, which includes the effect of the statistical weight factor, solubility of Ns°=10^<26>exp[-(3.1±0.2)/kT]cm^<-3> and reciprocal product of time constant of annealing of supersaturated state by dislocation density of 1/τn_d=1.3×10^<-2>exp[-(1.4±0.2)/kT]cm^2sec^<-1> have been obtained by Hall coefficient and resistivity measurements. It is concluded that the electrically active nickel atoms occupy the substitutional sites and nickel diffuses dissociatively and that the self-diffusion constant of silicon is 30exp[-(4.5±0.4)/kT]cm^2sec^<-1>.

• 社団法人応用物理学会の論文
• 1967-05-05

著者

• Yoshida Masayuki

  Electrical Communication Laboratory

• Saito Ken

  Electrical Communication Laboratory

関連論文

• Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
• Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching Techniques
• Behavior of Nickel as an Impurity in Silicon
• Numerical Solutions of Basic Equations of Dissociative Diffusion
• Anodic Phenomena in Nitrogen Plasma Jet
• Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon
• Reflection Electron Diffraction of Gold-Diffused Silicon
• Dissociative Diffusion of Gold in Silicon
• Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
• Criterions for the Assumptions of Thermal Equilibrium of Interstitial Atoms and of Vacancies in Dissociative Diffusion

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