Numerical Solutions of Basic Equations of Dissociative Diffusion

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概要

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• Basic equations of dissociative diffusion are non-linear. Their solutions are obtained numerically for three cases of gold in silicon. Approximate solutions are also obtained analytically by assuming that interstitial gold is in thermal equilibrium on the basis of the criterion for the assumption proposed previously by one of the authors. It is found that the numerical solution for interstitial gold reaches the thermal equilibrium value most rapidly and that the numerical solutions for substitutional gold andvacancy agree with the approximate solutions for them after interstitial gold reaches the thermal equilibrium value. It is also found that the experimental result of the rapid increase of substitutional gold at the beginning of diffusion of gold can not be explained by the numerical solution.

• 社団法人応用物理学会の論文
• 1971-05-05

著者

• Yoshida Masayuki

  Electrical Communication Laboratory

• Yoshida Masayuki

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kimura Ken

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
• Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching Techniques
• Behavior of Nickel as an Impurity in Silicon
• Numerical Solutions of Basic Equations of Dissociative Diffusion
• Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon
• Reflection Electron Diffraction of Gold-Diffused Silicon
• Dissociative Diffusion of Gold in Silicon
• Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
• Criterions for the Assumptions of Thermal Equilibrium of Interstitial Atoms and of Vacancies in Dissociative Diffusion

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