Criterions for the Assumptions of Thermal Equilibrium of Interstitial Atoms and of Vacancies in Dissociative Diffusion
スポンサーリンク
概要
- 論文の詳細を見る
Basic equations for dissociative diffusion are non-linear. To solve them analytically, it is usual way to assume that interstitial atoms or vacancies are in thermal equilibrium. To obtain a criterion for the assumption, the basic equations are approximated by linear equations when concentrations of substitutional atoms, interstitial atoms and vacancies come near to their thermal equilibrium values. It is found that the thermal equilibrium concentration as well as the diffusion constant is an important factor for the criterion.
- 社団法人応用物理学会の論文
- 1969-10-05
著者
関連論文
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching Techniques
- Behavior of Nickel as an Impurity in Silicon
- Numerical Solutions of Basic Equations of Dissociative Diffusion
- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon
- Reflection Electron Diffraction of Gold-Diffused Silicon
- Dissociative Diffusion of Gold in Silicon
- Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
- Criterions for the Assumptions of Thermal Equilibrium of Interstitial Atoms and of Vacancies in Dissociative Diffusion