Properties of Surface Imperfections Produced on Germanium by Cleaning Treatments

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Surface conductivity and Hall coefficient of germanium cleaned by ion-bombardmeflt and subsequent annealing have been measured over the temperature range 1.5-300°K. The results indicate that donor levels are produced near the surface by ion-bombardment and are eliminated with subsequent annealing at 500℃ in high vacuum making the surface space charge layer p-type. The density of the excess boles near the surface has a magnitude of 8Ω cm^<-2> for an n-type of 8Ωcm and 8.5×10^<10>cm^<-2> for a p-type of 20Ωcm. Ion-bombardment gives rise to a small hall maximum at low temperatures around 5°K. This maximum shifts to higher temperatures as annealing treatments are repeated and disappears if air is introduced. This maximum is attributed to holes of the order of 10^7 cm^<-2> in the space charge layer.
社団法人日本物理学会の論文
1961-12-05