Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon

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概要

• 論文の詳細を見る

• The distribution of dislocations near the junction formed by diffusion of phosphorus in silicon has been observed by means of etching technique. High density dislocations generated by diffusion of phosphorus penetrate to the depth of 3μ or more from the junction. The front of the dislocation net work goes further than the collector junction, when a transistor is produced by double diffusion technique. Drive-in phenomenon found in this process is attributable to enhanced diffusion by dislocations generated by diffusion procedure.

• 社団法人応用物理学会の論文
• 1964-09-15

著者

• Arata Hikaru

  Electrical Communication Laboratory

• SATO Yasuo

  Electrical Communication Laboratory

関連論文

• Dissociation of Oxide-Coated Cathode by Primary Electron Bombardment
• Diffusion of Zinc in Gallium Arsenide under Arsenic Vapor Pressure
• P-T-x Phase Diagram of the Lead Telluride System
• Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon
• The Use of Radioactive Isotope in a Study of Evolution of Strontium Oxide under Electron Bombardment
• Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching Techniques
• Properties of Surface Imperfections Produced on Germanium by Cleaning Treatments
• Effects of Heat Treatment on Lead Telluride under Tellurium Pressure : Carrier Concentration Dependence of Mobility and Etch Pits on Worked Surfaces

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