Effects of Heat Treatment on Lead Telluride under Tellurium Pressure : Carrier Concentration Dependence of Mobility and Etch Pits on Worked Surfaces
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概要
- 論文の詳細を見る
Single crystals of lead telluride having carrier concentrations from 8×10^<16> to 6×10^<17>/c.c. for n-type and from 10^<17> to 6×10^<18>/c.c. for p-type have been obtained with controlling tellurium pressure. Hall mobility of carriers depends on carrier concentration and has a maximum as a function of carrier concentration. Etch pits on crystal surfaces have been observed. Their density is 7×10^6/cm^2 before annealing and decreases to 4×10^6/cm^2 after annealing.
- 社団法人応用物理学会の論文
- 1963-11-15
著者
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Fujimoto Masatomo
Electrical Communication Laboratory
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KOBAYASHI Akio
Electrical Communication Laboratory
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SATO Yasuo
Electrical Communication Laboratory
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Sato Y.
Electrical Communication Laboratory
関連論文
- Deep Trap Levels in Silicon P-N Junctions
- Effect of Uniaxial Stress on Germanium p-n Junctions
- Cyclotron Absorption in n-Type Lead Telluride
- Diffusion of Zinc in Gallium Arsenide under Arsenic Vapor Pressure
- P-T-x Phase Diagram of the Lead Telluride System
- Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon
- Properties of Surface Imperfections Produced on Germanium by Cleaning Treatments
- Piezoresistance and Magnetoresistance in Impurity Conduction of Germanium
- Piezoresistance in N-type Germanium at Low Temperatures
- Effects of Heat Treatment on Lead Telluride under Tellurium Pressure : Carrier Concentration Dependence of Mobility and Etch Pits on Worked Surfaces