Effect of Uniaxial Stress on Germanium p-n Junctions
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概要
- 論文の詳細を見る
The stress effect on germanium Esaki- and ordinary diodes has been investigated when the stress is applied perpendicularly to the junction which is parallel to the (111) plane. No essential difference in the stress effect has been found between Esaki- and ordinary diodes so far as the ordinary diode current region is concerned. Stress-induced increase in forward current with constant slope of ln I vs V plots is interpreted in terms of changes in both mobility and intrinsic carrier concentration due to piezo-effect of germanium bulk. A large increase in forward current with stress accompanied by the decrease in the apparent slope of ln I vs V plots is attributed to the stress-induced recombination-generation current due to large local stress at the junction. A decrease in reverse current with uniaxial stress observed in heavily doped specimens is explained by the decrease in number of [111] light mass tunneling carriers due to piezo-effect.
- 社団法人応用物理学会の論文
- 1965-02-15
著者
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Imai Tetsuji
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Imai Tetsuji
Electrical Communication Laboratory
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KOBAYASHI Akio
Electrical Communication Laboratory
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SATO Hidekichi
Electrical Communication Laboratory
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Uchida Masao
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Sato Hidekichi
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Uchida Masao
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Akio
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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