Effect of Uniaxial Stress on Germanium p-n Junctions (II)
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概要
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Uniaxial stress effect on germanium backward diodes has been studied. Stress-induced increase in forward current (I_f) with constant slope of ln I_f vs V plots are explained by the model of Wortman et al. Band gap change with stress σ, dE_g/dσ, is evaluated as 7.5 × 10^<-12> eV cm^2/dyn. Stress-induced decrease in tunneling reverse current is interpreted on the basis of model that the effect of stress-induced decrease in tunneling carrier concentration exceeds that of increase in tunneling probability.
- 社団法人応用物理学会の論文
- 1965-06-15
著者
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Imai Tetsuji
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Imai Tetsuji
Electrical Communication Laboratory
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Uchida Masao
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uchida Masao
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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