The Effect of Uniaxial Stress on Ge p-n Junctions with Various Doping Densities

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概要

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• When p-n junctions with various doping densities are subjected to uniaxial stress perpendicular to the (111) junction plane, an extreme increase in the excess current with stress is found, in contrast with a small increase in the Esaki current. This change in the excess current of Esaki diodes is mainly ascribed to properties of heavily doped p-n junctions regardless of the existence of the Esaki characteristics. The experiments indicate that the stress sensitivity of p-n junctions becomes larger as the doping density becomes larger.

• 社団法人応用物理学会の論文
• 1963-08-15

著者

• Imai Tetsuji

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• IMAI T.

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

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• Effect of Uniaxial Stress on Germanium p-n Junctions (II)
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• Degradation of Ge-Doped and Zn-Doped GaAs Tunnel Diodes
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