On the Effects of Cu on As Doped Germanium Tunnel Junctions
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1966-11-15
著者
-
Imai Tetsuji
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Imai Tetsuji
Electrical Communication Laboratory
-
SATO Hidekichi
Electrical Communication Laboratory
関連論文
- Deterioration of Ge Esaki-Diodes
- Cold-emitting Cathode Materials
- New Cold Cathode Using Magnesium Oxide
- On the Release of Alkaline Earth Metals by the Electron Dissociation of Oxide Films Evaporated from the Oxide Coated Cathodes
- Electron Microscope Study of the Decomposition Process of Oxide Coated Cathodes
- Esaki-Diodes with Bending-Introduced Dislocations
- The Effect of Uniaxial Stress on Ge p-n Junctions with Various Doping Densities
- Effect of Uniaxial Stress on Germanium p-n Junctions (II)
- On the Effects of Cu on As Doped Germanium Tunnel Junctions
- Effect of Uniaxial Stress on Germanium p-n Junctions
- Degradation of Ge-Doped and Zn-Doped GaAs Tunnel Diodes
- Barium Supplied Oxide Coated Cathodes