Esaki-Diodes with Bending-Introduced Dislocations
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概要
- 論文の詳細を見る
Characteristics of Esaki-diodes made on plastically bent germanium crystals have been compared with those made on as-grown crystals. Etch pits density on (111) surface of the bent crystals gives the dislocation density of the order of 10^7/cm^2. Two sets of alloyed Esaki-diodes made on (111) faces of bent crystals and as-grown crystals indicate no significant difference between them so far as current ratio Ip/Iv and peak tunneling current density are concerned.
- 社団法人応用物理学会の論文
- 1965-04-15
著者
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Imai Tetsuji
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Imai Tetsuji
Electrical Communication Laboratory
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NIIZUMA Hideo
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Niizuma Hideo
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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- The Effect of Uniaxial Stress on Ge p-n Junctions with Various Doping Densities
- Effect of Uniaxial Stress on Germanium p-n Junctions (II)
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- Degradation of Ge-Doped and Zn-Doped GaAs Tunnel Diodes
- Barium Supplied Oxide Coated Cathodes