Degradation of Ge-Doped and Zn-Doped GaAs Tunnel Diodes
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概要
- 論文の詳細を見る
Degradation of the electrical characteristics during forward operation and high temperature storage has been studied in the Ge-doped and Zn-doped GaAs tunnel diodes. Degradation rate of the peak current under forward operation has been found to be quite similar in the both kinds of diodes. When annealed at temperatures around 300℃, tunneling current of the Ge-doped diode decreased monotonically with annealing time. On the contrary, in the case of the Zn-doped diode, an anomalous increase in the tunneling current is observed during similar heat treatment. Diffusion constant of acceptor germanium has been evaluated from the fall rate of the peak current of Ge-doped diodes during high temperature storage. The diffusion constant obtained is of the form D=D_0exp(-?E/kT) where D_0=54 cm^2/sec, and ?E=2.3±0.1 eV.
- 社団法人応用物理学会の論文
- 1968-08-05
著者
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Imai Tetsuji
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Imai Tetsuji
Electrical Communication Laboratory
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SATOH Hidekichi
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Satoh Hidekichi
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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