P-T-x Phase Diagram of the Lead Telluride System
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概要
- 論文の詳細を見る
Small single crystals of lead telluride were annealed at various tellurium or lead pressures in order to control their stoichiometric compositions. Samples equilibrated under high tellurium pressures were p-type and those under low tellurium or high lead pressures n-type. The tellurium pressures corresponding to the p-n transition boundary were found to be about 3×10^<-5> mmHg at 600℃ and about 10^<-3> mmHg at 750℃. From the analysis of the experimental results, high temperature equilibria for lead and tellurium vacancies were calculated by using the method of Kroger and Vink for imperfections in lead sulfide. Melting points of lead telluride were determined under various tellurium pressures by the thermal analysis of the freezing process and its P-T-x phase diagram was constructed.
- 社団法人応用物理学会の論文
- 1966-02-15
著者
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Fujimoto Masatomo
Electrical Communication Laboratory
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SATO Yasuo
Electrical Communication Laboratory
関連論文
- Cyclotron Absorption in n-Type Lead Telluride
- Diffusion of Zinc in Gallium Arsenide under Arsenic Vapor Pressure
- P-T-x Phase Diagram of the Lead Telluride System
- Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon
- Effects of Heat Treatment on Lead Telluride under Tellurium Pressure : Carrier Concentration Dependence of Mobility and Etch Pits on Worked Surfaces