Effect of Photon Recycling on Diffusion Length and Internal Quantum Efficiency in Al_xGa_<1-x>As-GaAs Heterostructures
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概要
- 論文の詳細を見る
The photon recycling process, i.e., the excitation of electron-hole pairs by the reabsorption of luminescent light, has large effects on the determination of the minority carrier diffusion length L and the internal quantum efficiency n_in GaAs with a high quantum efficiency. In this report, we show that the separate treatments of L and-7_in cause the erroneous results for materials with high quantum efficiency. We developed a consistent method of evaluating the photon recycling effects on both η_in and L, based on the simultaneous measurements of the external quantum efficiency η_ex and the photo-excited current under the short circuit conditionI_SC. This method was applied to the specimens with single heterestructure (p-Al_xGa_1-xAs-p-GaAs_n-) prepared by the liquid phase epitaxial (LPE) proccess.
- 社団法人応用物理学会の論文
- 1977-03-05
著者
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Kamiya Takeshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present Address) Departmen
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YANAI Hisayoshi
Faculty of Engineering, University of Tokyo
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Yanai Hisayoshi
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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KURIYAMA Toshihide
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Kuriyama Toshihide
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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